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Tunneling of minority holes through a double-barrier resonant-tunneling structure under applied bias

✍ Scribed by E. Goovaerts; C. Van Hoof; G. Borghs

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
273 KB
Volume
175
Category
Article
ISSN
0921-4526

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πŸ“œ SIMILAR VOLUMES

Hole localization effect on determinatio
Hole localization effect on determination of charge accumulation in double barrier resonant tunneling structures
✍ T.H. Wang; J.M. Zhou; Y. Huang; G.Z. Yang πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 130 KB

We have investigated photoluminescence of double-barrier diodes under various bias voltages and observed the saturation of the broadening of the photoluminescence lines. We have also studied the integrated photoluminescence intensity with increasing applied voltages near resonant voltages for high q