Biased driven resonant tunneling through a double barrier graphene based structure
β Scribed by R. Biswas; S. Mukhopadhyay; C. Sinha
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 571 KB
- Volume
- 42
- Category
- Article
- ISSN
- 1386-9477
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π SIMILAR VOLUMES
The quantum magneto-transport properties of a double ferromagnetic graphene barrier NG/FG/NG 0 /FG/ NG junction are investigated, where NG's are normal graphene layers, NG 0 is a normal graphene layer of thickness d and FG's are ferromagnetic graphene layers of thickness L. The FG layers with exchan
We propose a simple quantum structure which exhibits resonant tunneling under one bias and simple tunneling under the opposite one, thus acting as a rectifier. The diode consists of a single laterally-indented barrier. Due to its particular conductionband profile, electrons undergo resonant tunnelin