On the resonant tunneling through double-barrier structures in a tilted magnetic field
β Scribed by Vladimir I. Fal'ko
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 413 KB
- Volume
- 78
- Category
- Article
- ISSN
- 0038-1098
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π SIMILAR VOLUMES
We have investigated photoluminescence of double-barrier diodes under various bias voltages and observed the saturation of the broadening of the photoluminescence lines. We have also studied the integrated photoluminescence intensity with increasing applied voltages near resonant voltages for high q
We have determined the Lande Β΄factor g \* in self-organized InAs quantum dots using resonant-tunnelling experiments. With the magnetic field applied parallel to the growth direction z we find g \* k ΒΌ 0:74 for the specific dot investigated. When the magnetic field is tilted away by J from the growth