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Investigation of asymmetric double barrier resonant tunneling structures based on (AlGa)As/GaAs

โœ Scribed by O.H. Hughes; M. Henini; E.S. Alves; L. Eaves; M.L. Leadbeater; F.W. Sheard; G.A. Toombs; G. Hill; M.A. Pate; J.C. Portal; A. Celeste


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
344 KB
Volume
95
Category
Article
ISSN
0022-0248

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โœ T.H. Wang; J.M. Zhou; Y. Huang; G.Z. Yang ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 130 KB

We have investigated photoluminescence of double-barrier diodes under various bias voltages and observed the saturation of the broadening of the photoluminescence lines. We have also studied the integrated photoluminescence intensity with increasing applied voltages near resonant voltages for high q