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Tunneling cyclotron resonance and the renormalized effective mass in semiconductor barriers

✍ Scribed by Brozak, G.; de Andrada e Silva, E.; Sham, L.; DeRosa, F.; Miceli, P.; Schwarz, S.; Harbison, J.; Florez, L.; Allen, S.


Book ID
111678771
Publisher
The American Physical Society
Year
1990
Tongue
English
Weight
203 KB
Volume
64
Category
Article
ISSN
0031-9007

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Effective mass in the barriers of GaAs/A
✍ D. Landheer; G.C. Aers; Z.R. Wasilewski πŸ“‚ Article πŸ“… 1992 πŸ› Elsevier Science 🌐 English βš– 496 KB

We have investigated the peak and valley currents for a series of resonant tunneling diodes with AlAs barriers having widths in the range 1.9 5.9 nm and GaAs wells fabricated on GaAs substrates. Using a simple WKB expression that assumes resonant tunneling dominated by transfer through the 1-I condu