Effective mass in the barriers of GaAs/A
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D. Landheer; G.C. Aers; Z.R. Wasilewski
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Article
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1992
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Elsevier Science
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English
β 496 KB
We have investigated the peak and valley currents for a series of resonant tunneling diodes with AlAs barriers having widths in the range 1.9 5.9 nm and GaAs wells fabricated on GaAs substrates. Using a simple WKB expression that assumes resonant tunneling dominated by transfer through the 1-I condu