๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

The effect of non-constant effective tunneling mass and asymmetry for resonant tunneling in double-barrier structures

โœ Scribed by L.M. Schmitt

Book ID
106023532
Publisher
Springer
Year
1999
Tongue
English
Weight
293 KB
Volume
68
Category
Article
ISSN
1432-0630

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Effective mass in the barriers of GaAs/A
Effective mass in the barriers of GaAs/AlAs resonant tunneling double barrier diodes
โœ D. Landheer; G.C. Aers; Z.R. Wasilewski ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 496 KB

We have investigated the peak and valley currents for a series of resonant tunneling diodes with AlAs barriers having widths in the range 1.9 5.9 nm and GaAs wells fabricated on GaAs substrates. Using a simple WKB expression that assumes resonant tunneling dominated by transfer through the 1-I condu

The effect of scattering centers on reso
The effect of scattering centers on resonant tunneling in double barrier heterostructures
โœ Gu Benyuan; C. Coluzza; M. Mangiantini ๐Ÿ“‚ Article ๐Ÿ“… 1989 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 232 KB

A theoretical analysis of the effect of scattering centers on tunneling current in amorphous (a-SiC:H/a-Si:H/a-SiC:H) double barrier heterostructures (DBH) is presented in terms of the transfer matrix and Airy function approaches. We consider one localized center in the well of the DBH and take into