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Tunnel measurement of density of states of ultrathin arsenic-doped layers in silicon

โœ Scribed by M.W. Denhoff


Book ID
104356143
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
297 KB
Volume
165-166
Category
Article
ISSN
0921-4526

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Doping of Silicon Epitaxial Layers With
โœ Dr. H. Krause ๐Ÿ“‚ Article ๐Ÿ“… 1969 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 370 KB

## Doping of Silicon Epitaxial Layers with Arsenic at very High Concentrations Silicon epitaxial layers grown from reduction of SiCl, in H, have been highly doped with arsenic. As an upper limit of doping for layers without structural defects typical to high doping a value of about 2 . 1019 (3111-