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Tunnel barrier fabrication on Si and its impact on a spin transistor

โœ Scribed by C.L. Dennis; C.V. Tiusan; R.A. Ferreira; J.F. Gregg; G.J. Ensell; S.M. Thompson; P.P. Freitas

Book ID
108184204
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
329 KB
Volume
290-291
Category
Article
ISSN
0304-8853

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โœ Chenrong Xiong; Yan Wang; Peiyi Chen; Zhiping Yu ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 230 KB

Resonant tunneling diodes (RTD) are considered as one of the most promising band-gap engineering heterostructure devices for negative differential resistance (NDR) feature in the current-voltage trace. In this letter, a p-well SiGe/Si RTD is proposed and demonstrated. Its I-V relationship is obtaine