Lateral tunneling transistors fabricated by plane-dependent Si-doping in nonplanar epitaxy on GaAs (311)A and (411)A substrates

✍ Scribed by Hajime Ohnishi; Kazuhisa Fujita; Toshihide Watanabe

• Book ID: 108361559
• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 306 KB
• Volume: 28
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(96)00144-9