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Tunable Memory Characteristics of Nanostructured, Nonvolatile Charge Trap Memory Devices Based on a Binary Mixture of Metal Nanoparticles as a Charge Trapping Layer

✍ Scribed by Jang-Sik Lee; Yong-Mu Kim; Jeong-Hwa Kwon; Hyunjung Shin; Byeong-Hyeok Sohn; Jaegab Lee

No coin nor oath required. For personal study only.

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