Cr-W-N and Cr-Mo-N films were deposited on high speed steel substrate by unbalanced DC reactive magnetron sputtering. Cross-sectional scanning electron microscopy (SEM) morphologies of the films confirmed that the bilayer thickness of multilayer became thinner, and then structural transformation occ
Tribological properties and oxidation resistance of (Cr,Al,Y)N and (Cr,Al,Si)N films synthesized by radio-frequency magnetron sputtering method
β Scribed by T. Miyake; A. Kishimoto; H. Hasegawa
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 906 KB
- Volume
- 205
- Category
- Article
- ISSN
- 0257-8972
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β¦ Synopsis
Quaternary (Cr,Al)N-based nitride was synthesized from alloy targets by the radio-frequency magnetron sputtering method. The mole fractions of (Cr,Al,Y)N were 44 mol% CrN, 52 mol% AlN and 4 mol% YN, while those of (Cr,Al,Si)N was 49 mol% CrN, 47 mol% AlN, and 4 mol% SiN. As-deposited (Cr,Al,Y)N and (Cr,Al,Si)N films had a cubic NaCl structure, and their average surface roughness Ra was approximately 8.1 nm and 6.3 nm, respectively. From thermogravimetric analyses, the weight of (Cr,Al,Y)N was observed to increase from 0.03 mg/cm 2 to 0.30 mg/cm 2 in the temperature range of 600 Β°C-1000 Β°C. In contrast, a linear increase in the mass gain of (Cr,Al,Si)N from 0.05 mg/cm 2 to 0.18 mg/cm 2 was observed up to a temperature of 1000 Β°C. Structural changes from single-phase cubic (NaCl) to wurtzite (AlN) and Cr 2 N occurred after thermal annealing in an ambient environment. During oxidation, metallic elements diffused toward the top surface, where the growth of oxides such as Cr 2 O 3 , Al 2 O 3 and Y 2 O 3 were confirmed. For the tribological test, the friction coefficient was below 0.6 under dry conditions at room temperature.
π SIMILAR VOLUMES
Mo-Al-Si-N films were deposited by reactive magnetron sputtering on substrates of Si wafer, alumina, and stainless steel from composite targets consisting of Mo, Al and Si. To investigate the effect of Al content on the properties of the Mo-Al-Si-N films at a constant Si content of 9 at.%, the chemi