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Trapping of Minority Carriers in Thermal U−-Donors in n-Si

✍ Scribed by L. F. Makarenko; L. I. Murin


Publisher
John Wiley and Sons
Year
1988
Tongue
English
Weight
722 KB
Volume
145
Category
Article
ISSN
0370-1972

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Influence of chromium on minority carrie
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In n-type silicon the recombination strength of most metallic impurities is neatly smaller than in p-type, due to asymmetric capture cross-sections of these impurities for charge carriers. That is true for several impurities (Fe, Ni, Co, Al) but not for Cr. In this paper we try to demonstrate that C