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Hole traps in n-InSe single crystals by minority-carrier transient spectroscopy measurements

โœ Scribed by G. Micocci; P. Siciliano; A. Tepore


Publisher
Elsevier Science
Year
1990
Weight
518 KB
Volume
20
Category
Article
ISSN
0165-1633

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Study of deep levels in Schottky/CuInSe2
โœ A. M. Bakry; A. M. Elnaggar ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› Springer US ๐ŸŒ English โš– 152 KB

Deep-level transient spectroscopy (DLTS) measurements performed on Schottky/CulnSe2 diodes are reported. So far, Cd(Zn)S has been used as a window n-type layer to prepare CulnSe2 diodes. The diffusion of such a layer introduced defects into Cd(Zn)S-CulnSe2 diodes. Thus, the importance of using Schot