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The behaviour of minority carriers in thermally stimulated studies of the SiSiO2 interface

✍ Scribed by Gomenyuk, Yu. V. ;Lysenko, V. S. ;Osiyuk, I. N. ;Tyagulskii, I. P.


Publisher
John Wiley and Sons
Year
1993
Tongue
English
Weight
364 KB
Volume
140
Category
Article
ISSN
0031-8965

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The peculiarities of Si/SiO2 interfaces
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Si-rich-SiO 2 layers with excess silicon of 45-50% were grown by RF magnetron co-sputtering from pure SiO 2 and Si targets and were studied by Raman scattering, HRTEM, electron-paramagnetic resonance and X-ray diffraction (XRD) methods as well as by photo-voltage technique operated at different temp