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Influence of the Si/SiO2interface on the charge carrier density of Si nanowires

✍ Scribed by V. Schmidt; S. Senz; U. Gösele

Publisher
Springer
Year
2006
Tongue
English
Weight
323 KB
Volume
86
Category
Article
ISSN
1432-0630

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Si-rich-SiO 2 layers with excess silicon of 45-50% were grown by RF magnetron co-sputtering from pure SiO 2 and Si targets and were studied by Raman scattering, HRTEM, electron-paramagnetic resonance and X-ray diffraction (XRD) methods as well as by photo-voltage technique operated at different temp