𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Trapping center parameters in In6S7 crystals

✍ Scribed by M. Isik; N.M. Gasanly


Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
355 KB
Volume
406
Category
Article
ISSN
0921-4526

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Shallow trapping center parameters in as
✍ T. Yildirim; N. M. Gasanly πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 233 KB

## Abstract Thermally stimulated current measurements were carried out on as‐grown AgIn~5~S~8~ single crystals. The investigations were performed in temperatures ranging from 10 to 70 K with heating rate of 0.2 Ks^–1^. The analysis of the data revealed the electron trap level located at 5 meV. The

Trapping of mobile Mu centers in single
✍ R.L. Lichti; Y.G. Celebi; K.H. Chow; B. Hitti; S.F.J. Cox πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 222 KB

We have investigated muonium (Mu) defect centers in single crystal AlN as an analog for atomic hydrogen impurities. A nitrogen-related muon level-crossing resonance is associated with a static center formed by trapping of a mobile Mu impurity at another defect. This trapped Mu is released above 800