Trapping center parameters in In6S7 crystals
β Scribed by M. Isik; N.M. Gasanly
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 355 KB
- Volume
- 406
- Category
- Article
- ISSN
- 0921-4526
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## Abstract Thermally stimulated current measurements were carried out on asβgrown AgIn~5~S~8~ single crystals. The investigations were performed in temperatures ranging from 10 to 70 K with heating rate of 0.2 Ks^β1^. The analysis of the data revealed the electron trap level located at 5 meV. The
We have investigated muonium (Mu) defect centers in single crystal AlN as an analog for atomic hydrogen impurities. A nitrogen-related muon level-crossing resonance is associated with a static center formed by trapping of a mobile Mu impurity at another defect. This trapped Mu is released above 800