Trapping of mobile Mu centers in single crystal AlN

✍ Scribed by R.L. Lichti; Y.G. Celebi; K.H. Chow; B. Hitti; S.F.J. Cox

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 222 KB
• Volume: 340-342
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2003.09.034

✦ Synopsis

We have investigated muonium (Mu) defect centers in single crystal AlN as an analog for atomic hydrogen impurities. A nitrogen-related muon level-crossing resonance is associated with a static center formed by trapping of a mobile Mu impurity at another defect. This trapped Mu is released above 800 K: Muon spin depolarization data imply that both Mu 0 and ground-state Mu þ centers are mobile. Strong correlations between growth of the trapped Mu resonance and Mu 0 motion and transformation rates above 400 K imply that Mu 0 is the more likely precursor in that region.