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Trapping centers in undoped GaS layered single crystals

✍ Scribed by N.M. Gasanly; A. Aydınlı; N.S. Yüksek; Ö. Salihoğlu


Publisher
Springer
Year
2003
Tongue
English
Weight
349 KB
Volume
77
Category
Article
ISSN
1432-0630

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We have investigated muonium (Mu) defect centers in single crystal AlN as an analog for atomic hydrogen impurities. A nitrogen-related muon level-crossing resonance is associated with a static center formed by trapping of a mobile Mu impurity at another defect. This trapped Mu is released above 800