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Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique

✍ Scribed by L. C. Cai; H. Chen; C. L. Bao; Q. Huang; J. M. Zhou

Book ID
111590235
Publisher
Springer
Year
2004
Tongue
English
Weight
97 KB
Volume
39
Category
Article
ISSN
0022-2461

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## Son et al./Electrical properties of CBr4-doped GaAs epilayers Carbon incorporation into GaAs epilayers has been performed by atmospheric pressure metalorganic chemical vapor deposition using CBr4. The electrical properties of CBr4-doped GaAs epilayers grown on the GaAs substrates with various s