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Transport properties of epitaxial BSCCO films grown on untwinned NdGaO3 substrates

✍ Scribed by G. Balestrino; V. Foglietti; M. Marinelli; E. Milani; A. Paoletti; P. Paroli


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
252 KB
Volume
79
Category
Article
ISSN
0038-1098

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Growth and electrical properties of epit
✍ Doz. Dr. sc. H. Neumann; Dr. B. Schumann; Dipl.-Phys. D. Peters; Dr. A. Tempel; πŸ“‚ Article πŸ“… 1979 πŸ› John Wiley and Sons 🌐 English βš– 872 KB

A-oriented GaAs substrates by flash evaporation in the substrate temperature range Tsub = 570 ... 870 K. Epitaxialgrowth begins at Tsub = 645 K. The films had always the chalcopyrite structure. Indications to a transition from the chalcopyrite phase to the sphalerite phase were observed at Tsub = 87