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Transport near the metal-insulator transition: Polypyrrole doped with

✍ Scribed by Yoon, C. O.; M., Reghu; Moses, D.; Heeger, A. J.

Book ID: 126964342
Publisher: The American Physical Society
Year: 1994
Tongue: English
Weight: 734 KB
Volume: 49
Category: Article
ISSN: 1098-0121
DOI: 10.1103/physrevb.49.10851

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## Abstract We show for __n__ ‐type semiconductors, using Ge:As and 4__H__ ‐SiC:N as examples, that the spin density measured by electron spin resonance (ESR) falls sharply near the insulator–metal (IM) transition. Two reasons might be responsible for this phenomenon: potential fluctuations with co