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Electronic transport in doped poly (3,4-ethylenedioxythiophene) near the metal-insulator transition

✍ Scribed by A. Aleshin; R. Kiebooms; Reghu Menon; A.J. Heeger


Book ID
117541786
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
846 KB
Volume
90
Category
Article
ISSN
0379-6779

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## Abstract We show for __n__ ‐type semiconductors, using Ge:As and 4__H__ ‐SiC:N as examples, that the spin density measured by electron spin resonance (ESR) falls sharply near the insulator–metal (IM) transition. Two reasons might be responsible for this phenomenon: potential fluctuations with co