Transport model in n++-poly/SiOx/SiO2 /p-sub MOS capacitors for low-voltage nonvolatile memory applications

✍ Scribed by Irrera, F.; Marrangelo, L.

• Book ID: 114538036
• Publisher: IEEE
• Year: 2000
• Tongue: English
• Weight: 201 KB
• Volume: 47
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.822283