We studied some GaInAs-AlGaInAs semiconductor superlattices grown by molecular beam epitaxy and lattice matched to InP substrates. We performed photocurrent and photocurrent-voltage under monochromatic illumination at different energies measurements. The spectra recorded at \(80 \mathrm{~K}\) exhibi
Transport in superlattices in the stark ladder regime
β Scribed by B.S. Shchamkhalova; R.A. Suris
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 101 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0749-6036
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β¦ Synopsis
The current-voltage characteristic of a semiconductor superlattice in the Stark ladder regime has been calculated. It is shown that the negative differential conductivity onset electric field is defined by the scattering time, which depends only very slightly on the superlattice miniband width.
π SIMILAR VOLUMES
We carried out electroreflectance measurements in a CaAs/AJGaAs superlatice at is \(\mathrm{K}\) in order to investigate the resonant couplings between the Stark-ladder states. The experimental data are analyzed by using tight-binding theory, including the electric field effect. From the comparison
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