Observation of Wannier-Stark ladders in GaInAs-AlGaInAs semiconductor superlattices

✍ Scribed by G. Wang; P. Tronc; J. Depeyrot; J.C. Harmand; J.F. Palmier; V.P. Kochereshko

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 245 KB
• Volume: 16
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1994.1143

✦ Synopsis

We studied some GaInAs-AlGaInAs semiconductor superlattices grown by molecular beam epitaxy and lattice matched to InP substrates. We performed photocurrent and photocurrent-voltage under monochromatic illumination at different energies measurements. The spectra recorded at (80 \mathrm{~K}) exhibit three Wannier-Stark ladders. We identified them as corresponding to the is ground state of respectively the heavy- and light-hole exciton and to the (2 \mathrm{~s}) excited state of the heavy-hole exciton. Using the (1 \mathrm{~s}-2 \mathrm{~s}) splitting energy, the binding energy of the heavy-hole exciton ground state can therefore be accurately evaluated