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Transmission electron microscopy study of the formation of a contamination layer on the surface of porous silicon

✍ Scribed by J. Katcki; M. Bugajski


Publisher
Springer US
Year
1994
Tongue
English
Weight
883 KB
Volume
5
Category
Article
ISSN
0957-4522

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✍ D. GonzΓ‘lez; D. AraΓΊjo; S.I. Molina; A. SacedΓ³n; E. Calleja; R. GarcΓ­a πŸ“‚ Article πŸ“… 1994 πŸ› Elsevier Science 🌐 English βš– 972 KB

The lattice relaxation behavior in an InxGal\_xAs/GaAs linearly step-graded structure is studied by transmission electron microscopy (TEM). From the misfit dislocation densities measured by TEM at each interface the relaxation parameters such as strain and percentage relaxation are deduced for each