✍ Scribed by I. Djerdj; A.M. Tonejc; M. Bijelić; M. Buljan; U.V. Desnica; R. Kalish
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
The inÑuence of high-energy Si' irradiation on carbon-implanted silicon at low temperature was studied. C' Ions of kinetic energy 25 keV were implanted into Si(100) at room temperature with a dose density of 1 Â 1017 ions cm-2 after amorphization of the surface region by Ge' implantation at 200 keV.
TEM sample preparation, VLSI, semiconductor processing, Defect analysis A cross-sectional sample preparation technique is described that relies on lithographic and dry-etching processing, thus avoiding metallographic polishing and ion milling. The method is capable of producing cross-sectional trans
Palladium clusters, \(10-30 \mathrm{~nm}\) in size, were grown in UHV on amorphous carbon in a transmission electron microscope (TEM). The Pd catalyzed oxidation of carbon was then followed in situ in the TEM between 720 and \(800 \mathrm{~K}\) at a pressure \(p\) of \(\mathrm{O}_{2}\) with \(\left.
## Abstract Single crystal MgO specimens having low load Vickers indentations were thinned in an ion milling machine employing a single ion gun, and their characteristics were investigated with optical microscopy and high voltage electron microscopy (HVEM). It was found that the state of cleanlines