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Transmission coefficient of an electron through a heterostructure barrier grown on anisotropic materials

✍ Scribed by Kim, Kyoung-Youm; Lee, Byoungho

Book ID
123613843
Publisher
The American Physical Society
Year
1998
Tongue
English
Weight
111 KB
Volume
58
Category
Article
ISSN
1098-0121

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πŸ“œ SIMILAR VOLUMES

Tunneling time and the post-tunneling po
Tunneling time and the post-tunneling position of an electron through a potential barrier in an anisotropic semiconductor
✍ Kyoung-Youm Kim; Byoungho Lee πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 148 KB

Tunneling time and post-tunneling position of an electron incident on a heterostructure grown on anisotropic materials are derived by solving an effective mass equation including off-diagonal effective mass tensor elements. The effects of different effective masses for a heterostructure junction are