Electron mobility exceeding 10[sup 4] cm[sup 2]/V s in an AlGaN–GaN heterostructure grown on a sapphire substrate

✍ Scribed by Wang, T.; Ohno, Y.; Lachab, M.; Nakagawa, D.; Shirahama, T.; Sakai, S.; Ohno, H.

• Book ID: 120179025
• Publisher: American Institute of Physics
• Year: 1999
• Tongue: English
• Weight: 285 KB
• Volume: 74
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.124151