Transition metals in silicon and their gettering behaviour

✍ Scribed by K. Graff

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 594 KB
• Volume: 4
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(89)90217-1

✦ Synopsis

The paper reviews the behaviour of transition metals in silicon, with emphasis on the properties of the 3d transition metals which were investigated in more detail. After a short introduction concerning the sources of impuri O, contamination during device production and the deterioration of device performance, the chemical trends of the solubilities and di~lsivities 0[" the transition metals as a function of the temperature are discussed. 7he precipitation and the Jbrmation of" haze are discussed together with a homogeneous or heterogeneous nucleation process of the respective transition metal. Recent resuhs obtained by electron microscopy showed that the formation of epitaxial silicides is the predominant precipitation process. lhese results enable a better understanding of homogeneous nucleation. Getting of transition metals" is discussed in the second part of the paper. In order to determine the efficiency of gettering processes, two methods are presented together with several applications of these techniques.