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Diffusion of transition-metal impurities in silicon

✍ Scribed by K. Matsukawa; K. Shirai; H. Yamaguchi; H. Katayama-Yoshida

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
154 KB
Volume
401-402
Category
Article
ISSN
0921-4526

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## Abstract Based on a model for redistributing heavy metals in two‐phase‐silicon an expression is obtained, describing the intensity of redistribution, being determined by the segregation coefficient between intrinsic and phosphorus‐doped silicon and the spatial extension of the phosphorus phase.