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Studies of anomalous diffusion of impurities in silicon

✍ Scribed by K.H. Nicholas

Publisher: Elsevier Science
Year: 1966
Tongue: English
Weight: 737 KB
Volume: 9
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(66)90023-2

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## Abstract Based on a model for redistributing heavy metals in two‐phase‐silicon an expression is obtained, describing the intensity of redistribution, being determined by the segregation coefficient between intrinsic and phosphorus‐doped silicon and the spatial extension of the phosphorus phase.