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Transient photocapacitance and capacitance studies of interface and bulk states in metal / a-SiN1.6:H / a-Si:H / c-Si devices

โœ Scribed by Christian Godet; Jerzy Kanicki; Avgerinos Gelatos

Book ID
117147177
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
272 KB
Volume
137-138
Category
Article
ISSN
0022-3093

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โœ C. Godet; J. Kanicki ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 314 KB

The a-Si N, ,:Hic-Si interface density of states is studied by the photocapacitance transient spectroscopy (PCTS) technique. After illumination with 4.13 eV photons, the PCTS reveals an interface defect creation while the midgap voltage shift indicates a hole injection from c-Si and subsequent hole