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Transient characteristics of the InGaP–GaAs–InGaAs–GaAs transistor laser

✍ Scribed by Md Ahsan Habib, Saeed Mahmud Ullah, Shahida Rafique

Book ID
120755278
Publisher
Springer
Year
2013
Tongue
English
Weight
221 KB
Volume
45
Category
Article
ISSN
0306-8919

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✍ Ching-Sung Lee; Wei-Chou Hsu 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 265 KB

A two-dimensional analytic model is proposed for characterizing the InGaP/InGaAs/GaAs metal-insulator-semiconductor (MIS) like pseudomorphic doped-channel field-effect transistor (PDCFET). The velocity overshoot effects, associated with the low effective mass in the In 0.15 Ga 0.85 As channel, have