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Tradeoff between threshold voltage and breakdown in high-voltage double-diffused MOS transistors

✍ Scribed by Pocha, M.D.; Plummer, J.D.; Meindl, J.D.

Book ID: 114592834
Publisher: IEEE
Year: 1978
Tongue: English
Weight: 401 KB
Volume: 25
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1978.19273

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