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Study of the influence of design-technological factors on the conductivity and breakdown voltage of lateral double-diffused MOS transistors using numerical simulation

✍ Scribed by V. Ya. Niskov; S. N. Zolotarev; A. N. Gashkov

Book ID: 111444508
Publisher: Springer
Year: 2009
Tongue: English
Weight: 198 KB
Volume: 43
Category: Article
ISSN: 1063-7826
DOI: 10.1134/s1063782609130120

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