High threshold voltages in small geometry mos transistors due to edge contamination

✍ Scribed by Joseph H Nevin; Sharon C.M Chuang; J.T Boyd; Darrel D Donaldson; H.Thurman Henderson; Stephen A Sefick

• Publisher: Elsevier Science
• Year: 1980
• Tongue: English
• Weight: 419 KB
• Volume: 20
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(80)90589-2