✦ LIBER ✦

TP-B5 integrated GaInAsP/InP lasers formed by reactive ion etching

✍ Scribed by Coldren, L.A.; Iga, K.; Miller, B.I.; Rentschler, J.A.

Book ID: 114593618
Publisher: IEEE
Year: 1980
Tongue: English
Weight: 148 KB
Volume: 27
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1980.20218

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Nanofabrication of GaInAsP/InP 2-dimensi

Nanofabrication of GaInAsP/InP 2-dimensional photonic crystals by a methane-based reactive ion beam etching

✍ Toshihiko Baba; Naohisa Kamizawa; Mitsutaka Ikeda 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 466 KB

As a 2-dimensional photonic crystal, columns periodically arranged with nanometer order pitches have been formed on GalnAsP/InP wafer, aiming at the effective control of spontaneous emission without discrimination of nonradiative process. For the fine and low damage etching of columns, a reactive io

Extremely smooth vertical facets of InP

Extremely smooth vertical facets of InP formed by reactive ion etching and selective chemical beam epitaxy regrowth

✍ M. Gotoda; H. Sugimoto; S. Maruno; T. Isu; W. Susaki; M. Nunoshita 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 333 KB