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Nanofabrication of GaInAsP/InP 2-dimensional photonic crystals by a methane-based reactive ion beam etching

✍ Scribed by Toshihiko Baba; Naohisa Kamizawa; Mitsutaka Ikeda


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
466 KB
Volume
227
Category
Article
ISSN
0921-4526

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✦ Synopsis


As a 2-dimensional photonic crystal, columns periodically arranged with nanometer order pitches have been formed on GalnAsP/InP wafer, aiming at the effective control of spontaneous emission without discrimination of nonradiative process. For the fine and low damage etching of columns, a reactive ion beam etching based on methane gaseous source was used. By optimizing etching condition, almost vertical columns with 150 nm in diameter and 600-800 nm in height were realized, which satisfies the photonic band gap condition for the wavelength range of 1.3 1.55 ~m.