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Towards implementation of a nickel silicide process for CMOS technologies

✍ Scribed by C. Lavoie; F.M. d’Heurle; C. Detavernier; C. Cabral Jr.

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
652 KB
Volume
70
Category
Article
ISSN
0167-9317

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✦ Synopsis

In this paper, we review some of the advantages and disadvantages of nickel silicide as a material for the electrical contacts to the source, drain and gate of current and future CMOS devices. We first present some of the limitations imposed on the current cobalt silicide process because of the constant scaling, of the introduction of new substrate geometries (i.e. thin silicon on insulator) and of the modifications to the substrate material (i.e. SiGe). We then discuss the advantages of NiSi and for each of the CoSi limitations, we point out why Ni is believed to be superior from the point of view of material 2 properties, miscibility of phases and formation mechanisms. Discussion follows on the expected limitations of NiSi and some of the possible solutions to palliate these limitations.

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