✦ LIBER ✦

Total suppression of the inter-edge-channel scattering in a GaAs/AlGaAs heterostructure

✍ Scribed by R.J.F. van Haren; F.A.P. Blom; W. de Lange; J.H. Wolter

Book ID: 118366880
Publisher: Elsevier Science
Year: 1994
Tongue: English
Weight: 336 KB
Volume: 305
Category: Article
ISSN: 0039-6028
DOI: 10.1016/0039-6028(94)90880-x

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Comment on the compositional dependence

Comment on the compositional dependence of bandgap in AlGaAs and band-edge discontinuities in AlGaAs-GaAs heterostructures

✍ Giugni, S; Tansley, T L 📂 Article 📅 1992 🏛 Institute of Physics 🌐 English ⚖ 240 KB

Fabrication of narrow channels in GaAs-A

Fabrication of narrow channels in GaAs-AlGaAs heterostructures and the lateral quantization effect

✍ Y. Takagaki; F. Wakaya; Y. Kusumi; S. Takaoka; Y. Yuba; K. Gamo; K. Murase; S. N 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 383 KB

High-frequency conductivity of a 2D elec

High-frequency conductivity of a 2D electron channel of the GaAs/AlGaAs heterostructure in the QHE regime

✍ I.E. Batov; A.V. Polisskii; M.I. Reznikov; V.I. Tal'yanskii 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 213 KB

Minimisation of base transit time in AlG

Minimisation of base transit time in AlGaAs/GaAs heterostructure bipolar transistor (HBT)

✍ Zebda, Y.; Elnagar, A.; Hussein, A. 📂 Article 📅 1997 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 262 KB

Spin dependence of inter-edge-channel sc

Spin dependence of inter-edge-channel scattering in Si-MOSFETs in the quantum Hall regime

✍ P.C. van Son; S.L. Wang; T.M. Klapwijk 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 297 KB

Electron transport properties of AlGaAs/

Electron transport properties of AlGaAs/GaAs heterostructure containing a d-doping in the quantum well

✍ Rekaya, S. ;Bouzaïene, L. ;Sfaxi, L. ;Hjiri, M. ;Contreras, S. ;Robert, J. L. ;M 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 173 KB

## Abstract Electronic properties of the Si δ‐doped AlGaAs/GaAs heterostructure such as the electron density and electron mobility have been studied when the Al concentration in the vicinity to the silicon (__x__~Al~(Si)) is varied. Shubnikov–de Haas and quantum Hall effect measurements at 4.2 K ha