Electron transport properties of AlGaAs/GaAs heterostructure containing a d-doping in the quantum well

✍ Scribed by Rekaya, S. ;Bouzaïene, L. ;Sfaxi, L. ;Hjiri, M. ;Contreras, S. ;Robert, J. L. ;Maaref, H.

• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 173 KB
• Volume: 202
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200460437

✦ Synopsis

Abstract

Electronic properties of the Si δ‐doped AlGaAs/GaAs heterostructure such as the electron density and electron mobility have been studied when the Al concentration in the vicinity to the silicon (x~Al~(Si)) is varied. Shubnikov–de Haas and quantum Hall effect measurements at 4.2 K have been carried out to investigate the existence of a quasi‐two‐dimensional electron gas (2DEG) in such structures. We have studied the effects of the Al concentration x~Al~(Si) on the electronic properties. Results show an improvement of the electron transport properties when x~Al~(Si) decreases. But as far as the electron mobility is concerned, a slight difference between the theoretical and experimental values was observed. The value of interface charge density (N~BI~) is necessary to explain the experimental mobility at low temperature. For N~BI~ ≈ 6 × 10^9^ cm^–2^, we have obtained a good agreement between the theoretical and experimental electron mobility. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)