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Photoluminescence property of uniaxial strained GaAs/AlGaAs quantum wells contained in a micro-tube

✍ Scribed by N. Ohtani; K. Kubota; P. Vaccaro; T. Aida; M. Hosoda

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
66 KB
Volume
17
Category
Article
ISSN
1386-9477

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## Abstract Electronic properties of the Si δ‐doped AlGaAs/GaAs heterostructure such as the electron density and electron mobility have been studied when the Al concentration in the vicinity to the silicon (__x__~Al~(Si)) is varied. Shubnikov–de Haas and quantum Hall effect measurements at 4.2 K ha