Total reÑection x-ray photoelectron spectroscopy (TRXPS) has been applied to measure contamination elements on Si wafers using an x-ray photoelectron spectrometer. The radiated x-rays are limited by a slit placed in front of the Al anode, and the grazing angle is made shallow by using a crystal to m
Total reflection x-ray photoelectron spectroscopy of a tantalum–titanium multilayer
✍ Scribed by Jun Kawai; Makoto Sai; Tetsuro Sugimura; Kouichi Hayashi; Hisataka Takenaka; Yoshinori Kitajima
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 89 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0049-8246
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✦ Synopsis
X-ray photoelectron spectra of two
Ta-Ti bilayers on a Si wafer are measured using a soft x-ray synchrotron radiation beamline at the Photon Factory. The grazing incident x-rays are used to excite photoelectrons. The photoelectron intensity dependence is measured as the change in the glancing angle of the incident x-rays. A change in the angular dependence of photoelectron intensity and a chemical shift are observed with change in thermal treatment of the multilayer sample.
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