## X-ray photoelectron spectra of two Ta-Ti bilayers on a Si wafer are measured using a soft x-ray synchrotron radiation beamline at the Photon Factory. The grazing incident x-rays are used to excite photoelectrons. The photoelectron intensity dependence is measured as the change in the glancing an
Total reflection X-ray photoelectron spectroscopy
β Scribed by Jun Kawai; Shinjiro Hayakawa; Yoshinori Kitajima; Kuniko Maeda; Yohichi Gohshi
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 341 KB
- Volume
- 76
- Category
- Article
- ISSN
- 0368-2048
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Total reΓection x-ray photoelectron spectroscopy (TRXPS) has been applied to measure contamination elements on Si wafers using an x-ray photoelectron spectrometer. The radiated x-rays are limited by a slit placed in front of the Al anode, and the grazing angle is made shallow by using a crystal to m
A review of the applications of total reflection x-ray photoelectron spectroscopy (TRXPS) to the semiconductor surface are described. When the grazing angle of incident x-rays is below the critical angle of x-ray total reflection, the penetration depth of the x-rays into the material is strongly att