𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Total reflection X-ray photoelectron spectroscopy

✍ Scribed by Jun Kawai; Shinjiro Hayakawa; Yoshinori Kitajima; Kuniko Maeda; Yohichi Gohshi


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
341 KB
Volume
76
Category
Article
ISSN
0368-2048

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Total reflection x-ray photoelectron spe
✍ Jun Kawai; Makoto Sai; Tetsuro Sugimura; Kouichi Hayashi; Hisataka Takenaka; Yos πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 89 KB πŸ‘ 2 views

## X-ray photoelectron spectra of two Ta-Ti bilayers on a Si wafer are measured using a soft x-ray synchrotron radiation beamline at the Photon Factory. The grazing incident x-rays are used to excite photoelectrons. The photoelectron intensity dependence is measured as the change in the glancing an

Detection of surface impurities on Si wa
✍ Iijima, Yoshitoki; Miyoshi, Kousuke; Saito, Shuichi πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 400 KB πŸ‘ 2 views

Total reΓ‘ection x-ray photoelectron spectroscopy (TRXPS) has been applied to measure contamination elements on Si wafers using an x-ray photoelectron spectrometer. The radiated x-rays are limited by a slit placed in front of the Al anode, and the grazing angle is made shallow by using a crystal to m

Recent advances in the application of to
✍ Yoshitoki Iijima; Kousuke Miyoshi πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 132 KB πŸ‘ 2 views

A review of the applications of total reflection x-ray photoelectron spectroscopy (TRXPS) to the semiconductor surface are described. When the grazing angle of incident x-rays is below the critical angle of x-ray total reflection, the penetration depth of the x-rays into the material is strongly att