Effect of Defect Bands on the Electrical
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Horváth, Zs. J. ;Gombia, E. ;Pal, D. ;Kovacsics, Cs. ;Capannese, G. ;Pintér, I.
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Article
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1999
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John Wiley and Sons
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English
⚖ 177 KB
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Proton bombarded p-Si and neutron irradiated n-GaAs have been studied by DLTS, current±voltage, and capacitance±voltage measurements in metal±semiconductor junctions. The junctions were prepared by evaporation of Al onto silicon and of gold onto GaAs. Both junctions exhibited defect bands after bomb