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Topography of Defect Parameters on Si and GaAs Wafers

✍ Scribed by K. Dornich; B. Gründig-Wendrock; T. Hahn; J.R. Niklas


Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
287 KB
Volume
6
Category
Article
ISSN
1438-1656

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Effect of Defect Bands on the Electrical
✍ Horváth, Zs. J. ;Gombia, E. ;Pal, D. ;Kovacsics, Cs. ;Capannese, G. ;Pintér, I. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 177 KB 👁 1 views

Proton bombarded p-Si and neutron irradiated n-GaAs have been studied by DLTS, current±voltage, and capacitance±voltage measurements in metal±semiconductor junctions. The junctions were prepared by evaporation of Al onto silicon and of gold onto GaAs. Both junctions exhibited defect bands after bomb