## Abstract Thinβfilm transistors (TFTs) with the indium gallium zinc oxide (IGZO) as a channel layer and the yttrium hafnium zinc oxide (YHZO) as a gate insulator layer were fabricated and both of layers were deposited by solution process. YHZO solution was prepared by dissolving yttrium nitrate,
β¦ LIBER β¦
Top-gate LZTO thin-film transistors with PMMA gate insulator by solution process
β Scribed by Yue, Lan; Pu, Haifeng; Pang, Shujian; Li, Honglei; Zhang, Qun
- Book ID
- 111968233
- Publisher
- EDP Sciences
- Year
- 2012
- Tongue
- English
- Weight
- 793 KB
- Volume
- 97
- Category
- Article
- ISSN
- 0295-5075
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