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Top-gate amorphous IGZO thin-film transistors with a SiO buffer layer inserted between active channel layer and gate insulator

✍ Scribed by F. Zhou; H.P. Lin; L. Zhang; J. Li; X.W. Zhang; D.B. Yu; X.Y. Jiang; Z.L. Zhang


Book ID
113514132
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
740 KB
Volume
12
Category
Article
ISSN
1567-1739

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