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Development of ZnO-based thin-film transistors with top gate structures

✍ Scribed by Eui-Jung Yun; Hye Ji Moon; Byung Seong Bae; Sun-Moon Jin; Hyoung G. Nam; Nam-Ihn Cho


Book ID
111857324
Publisher
The Korean Physical Society
Year
2012
Tongue
English
Weight
160 KB
Volume
60
Category
Article
ISSN
0374-4884

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We report on the fabrication of ultraviolet (UV)-sensing top-gate ZnO thin-film transistors (TFTs) with a poly-4-vinylphenol (PVP) polymer gate dielectric on glass substrate. Our top-gate ZnO-TFT showed a field-effect mobility of 0.05 cm 2 /V s, maximum saturation current of 0.11 A at a gate bias of