## Abstract The performance of topβgate thin film transistors with solution processed zinc oxide (ZnO) channel layer and poly(4βvinylphenol) (PVP) gate dielectric have been investigated. The transparency of the PVP film was more than 80% in the visible region, indicating that PVP can be used as a p
β¦ LIBER β¦
Development of ZnO-based thin-film transistors with top gate structures
β Scribed by Eui-Jung Yun; Hye Ji Moon; Byung Seong Bae; Sun-Moon Jin; Hyoung G. Nam; Nam-Ihn Cho
- Book ID
- 111857324
- Publisher
- The Korean Physical Society
- Year
- 2012
- Tongue
- English
- Weight
- 160 KB
- Volume
- 60
- Category
- Article
- ISSN
- 0374-4884
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