Top gate copper phthalocyanine thin film transistors with laser-printed dielectric
✍ Scribed by A.K. Diallo; L. Rapp; S. Nénon; A.P. Alloncle; P. Delaporte; F. Fages; C. Videlot-Ackermann
- Book ID
- 116899339
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 815 KB
- Volume
- 161
- Category
- Article
- ISSN
- 0379-6779
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We report on the fabrication of ultraviolet (UV)-sensing top-gate ZnO thin-film transistors (TFTs) with a poly-4-vinylphenol (PVP) polymer gate dielectric on glass substrate. Our top-gate ZnO-TFT showed a field-effect mobility of 0.05 cm 2 /V s, maximum saturation current of 0.11 A at a gate bias of
## Abstract The performance of top‐gate thin film transistors with solution processed zinc oxide (ZnO) channel layer and poly(4‐vinylphenol) (PVP) gate dielectric have been investigated. The transparency of the PVP film was more than 80% in the visible region, indicating that PVP can be used as a p